JPH0365263U - - Google Patents
Info
- Publication number
- JPH0365263U JPH0365263U JP1989128058U JP12805889U JPH0365263U JP H0365263 U JPH0365263 U JP H0365263U JP 1989128058 U JP1989128058 U JP 1989128058U JP 12805889 U JP12805889 U JP 12805889U JP H0365263 U JPH0365263 U JP H0365263U
- Authority
- JP
- Japan
- Prior art keywords
- bidirectional diode
- gate
- fet
- built
- power
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000002457 bidirectional effect Effects 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
- H10D84/141—VDMOS having built-in components
- H10D84/148—VDMOS having built-in components the built-in components being breakdown diodes, e.g. Zener diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1989128058U JPH0365263U (en]) | 1989-10-31 | 1989-10-31 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1989128058U JPH0365263U (en]) | 1989-10-31 | 1989-10-31 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0365263U true JPH0365263U (en]) | 1991-06-25 |
Family
ID=31675790
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1989128058U Pending JPH0365263U (en]) | 1989-10-31 | 1989-10-31 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0365263U (en]) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012109590A (ja) * | 2000-03-06 | 2012-06-07 | Rohm Co Ltd | 半導体装置 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6350070A (ja) * | 1986-08-19 | 1988-03-02 | Matsushita Electronics Corp | 縦型ｍｏｓ電界効果トランジスタ |
| JPH01114077A (ja) * | 1987-10-27 | 1989-05-02 | Nec Corp | 半導体装置 |
-
1989
- 1989-10-31 JP JP1989128058U patent/JPH0365263U/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6350070A (ja) * | 1986-08-19 | 1988-03-02 | Matsushita Electronics Corp | 縦型ｍｏｓ電界効果トランジスタ |
| JPH01114077A (ja) * | 1987-10-27 | 1989-05-02 | Nec Corp | 半導体装置 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012109590A (ja) * | 2000-03-06 | 2012-06-07 | Rohm Co Ltd | 半導体装置 |